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MMBTSC945W
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 150 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R O Y P L Symbol hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 40 70 120 200 350 60 50 5 Typ. 300 2.5 4 Max. 80 140 240 400 700 0.1 0.1 0.3 Unit V V V A A V MHz pF dB
Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Cutoff Current at VCB = 40 V Emitter Cutoff Current at VEB = 3 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, IE = 0.5 mA, f = 1 KHz, RS = 500
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/09/2006
MMBTSC945W
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/09/2006

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